Synthesis and characterization of Zn(O,OH)S and AgInS2 layers to be used in thin film solar cells
Identifieur interne : 003784 ( Main/Repository ); précédent : 003783; suivant : 003785Synthesis and characterization of Zn(O,OH)S and AgInS2 layers to be used in thin film solar cells
Auteurs : RBID : Pascal:10-0497382Descripteurs français
- Pascal (Inist)
- Couche mince, Cellule solaire, Sodium, Diffraction RX, Structure chalcopyrite, Conductivité type p, Coefficient absorption, Bande interdite, Cinétique, Couche tampon, Vaporisation, Sulfure d'argent, Sulfure d'indium, Composé ternaire, Dépôt bain chimique, Zn(O,OH)S, AgInS2, 8460J, 6110N, 6855J, 7820C.
- Wicri :
- concept : Sodium.
English descriptors
- KwdEn :
Abstract
In this paper AgInS2 and Zn(O,OH)S thin films were synthesized and characterized. AgInS2 layers were grown by co-evaporation from metal precursors in a two-step process, and, Zn(O,OH)S thin films were deposited from chemical bath containing thiourea, zinc acetate, sodium citrate and ammonia. X-ray diffraction measurements indicated that AgInS2 thin films grown with chalcopyrite structure, and the as-grown Zn(O,OH)S thin films were polycrystalline. It was also found that the AgInS2 films presented p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and energy band-gap Eg of about 1.95 eV, Zn(O,OH),S thin films presented Eg of about 3.89 eV. Morphological analysis showed that under this synthesis conditions Zn(O,OH),S thin films coated uniformly the absorber layer. Additionally, the Zn(O,OH)S kinetic growth on AgInS2 layer was studied also. Finally, the results suggest that these layers possibly could be used in one-junction solar cells and/or as top cell in a tandem solar cell.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Synthesis and characterization of Zn(O,OH)S and AgInS<sub>2</sub> layers to be used in thin film solar cells</title><author><name sortKey="Vallejo, W" uniqKey="Vallejo W">W. Vallejo</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Química, Universidad Nacional de Colombia, Cra 30 No 45-03</s1><s2>Bagotá</s2><s3>COL</s3><sZ>1 aut.</sZ></inist:fA14><country>Colombie</country><wicri:noRegion>Bagotá</wicri:noRegion></affiliation></author><author><name sortKey="Arredondo, C A" uniqKey="Arredondo C">C. A. Arredondo</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Departamento de Física, Universidad Nacional de Colombia, Cra 30 No 45-03</s1><s2>Bogota</s2><s3>COL</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Colombie</country><wicri:noRegion>Bogota</wicri:noRegion></affiliation></author><author><name sortKey="Gordillo, G" uniqKey="Gordillo G">G. Gordillo</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Departamento de Física, Universidad Nacional de Colombia, Cra 30 No 45-03</s1><s2>Bogota</s2><s3>COL</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Colombie</country><wicri:noRegion>Bogota</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0497382</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0497382 INIST</idno><idno type="RBID">Pascal:10-0497382</idno><idno type="wicri:Area/Main/Corpus">003A88</idno><idno type="wicri:Area/Main/Repository">003784</idno></publicationStmt><seriesStmt><idno type="ISSN">0169-4332</idno><title level="j" type="abbreviated">Appl. surf. sci.</title><title level="j" type="main">Applied surface science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption coefficient</term><term>Buffer layer</term><term>Chalcopyrite structure</term><term>Chemical bath deposition</term><term>Energy gap</term><term>Indium sulfide</term><term>Kinetics</term><term>P type conductivity</term><term>Silver sulfide</term><term>Sodium</term><term>Solar cell</term><term>Ternary compound</term><term>Thin film</term><term>Vaporization</term><term>X ray diffraction</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Couche mince</term><term>Cellule solaire</term><term>Sodium</term><term>Diffraction RX</term><term>Structure chalcopyrite</term><term>Conductivité type p</term><term>Coefficient absorption</term><term>Bande interdite</term><term>Cinétique</term><term>Couche tampon</term><term>Vaporisation</term><term>Sulfure d'argent</term><term>Sulfure d'indium</term><term>Composé ternaire</term><term>Dépôt bain chimique</term><term>Zn(O,OH)S</term><term>AgInS2</term><term>8460J</term><term>6110N</term><term>6855J</term><term>7820C</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Sodium</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this paper AgInS<sub>2</sub> and Zn(O,OH)S thin films were synthesized and characterized. AgInS<sub>2</sub> layers were grown by co-evaporation from metal precursors in a two-step process, and, Zn(O,OH)S thin films were deposited from chemical bath containing thiourea, zinc acetate, sodium citrate and ammonia. X-ray diffraction measurements indicated that AgInS<sub>2</sub> thin films grown with chalcopyrite structure, and the as-grown Zn(O,OH)S thin films were polycrystalline. It was also found that the AgInS<sub>2</sub> films presented p-type conductivity, a high absorption coefficient (greater than 10<sup>4</sup> cm<sup>-1</sup>) and energy band-gap Eg of about 1.95 eV, Zn(O,OH),S thin films presented Eg of about 3.89 eV. Morphological analysis showed that under this synthesis conditions Zn(O,OH),S thin films coated uniformly the absorber layer. Additionally, the Zn(O,OH)S kinetic growth on AgInS<sub>2</sub> layer was studied also. Finally, the results suggest that these layers possibly could be used in one-junction solar cells and/or as top cell in a tandem solar cell.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0></fA01><fA03 i2="1"><s0>Appl. surf. sci.</s0></fA03><fA05><s2>257</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Synthesis and characterization of Zn(O,OH)S and AgInS<sub>2</sub> layers to be used in thin film solar cells</s1></fA08><fA11 i1="01" i2="1"><s1>VALLEJO (W.)</s1></fA11><fA11 i1="02" i2="1"><s1>ARREDONDO (C. A.)</s1></fA11><fA11 i1="03" i2="1"><s1>GORDILLO (G.)</s1></fA11><fA14 i1="01"><s1>Departamento de Química, Universidad Nacional de Colombia, Cra 30 No 45-03</s1><s2>Bagotá</s2><s3>COL</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Departamento de Física, Universidad Nacional de Colombia, Cra 30 No 45-03</s1><s2>Bogota</s2><s3>COL</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>503-507</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16002</s2><s5>354000193190950270</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>25 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0497382</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied surface science</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>In this paper AgInS<sub>2</sub> and Zn(O,OH)S thin films were synthesized and characterized. AgInS<sub>2</sub> layers were grown by co-evaporation from metal precursors in a two-step process, and, Zn(O,OH)S thin films were deposited from chemical bath containing thiourea, zinc acetate, sodium citrate and ammonia. X-ray diffraction measurements indicated that AgInS<sub>2</sub> thin films grown with chalcopyrite structure, and the as-grown Zn(O,OH)S thin films were polycrystalline. It was also found that the AgInS<sub>2</sub> films presented p-type conductivity, a high absorption coefficient (greater than 10<sup>4</sup> cm<sup>-1</sup>) and energy band-gap Eg of about 1.95 eV, Zn(O,OH),S thin films presented Eg of about 3.89 eV. Morphological analysis showed that under this synthesis conditions Zn(O,OH),S thin films coated uniformly the absorber layer. Additionally, the Zn(O,OH)S kinetic growth on AgInS<sub>2</sub> layer was studied also. Finally, the results suggest that these layers possibly could be used in one-junction solar cells and/or as top cell in a tandem solar cell.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="3"><s0>001B70</s0></fC02><fC02 i1="03" i2="3"><s0>001B60A10N</s0></fC02><fC02 i1="04" i2="3"><s0>001B60H55J</s0></fC02><fC02 i1="05" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Couche mince</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Thin film</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Capa fina</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Solar cell</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Célula solar</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Sodium</s0><s2>NC</s2><s5>06</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Sodium</s0><s2>NC</s2><s5>06</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Sodio</s0><s2>NC</s2><s5>06</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Diffraction RX</s0><s5>07</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>X ray diffraction</s0><s5>07</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Difracción RX</s0><s5>07</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Structure chalcopyrite</s0><s5>08</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Chalcopyrite structure</s0><s5>08</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Estructura calcopirita</s0><s5>08</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Conductivité type p</s0><s5>09</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>P type conductivity</s0><s5>09</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Conductividad tipo p</s0><s5>09</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Coefficient absorption</s0><s5>10</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Absorption coefficient</s0><s5>10</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Coeficiente absorción</s0><s5>10</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Bande interdite</s0><s5>11</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Energy gap</s0><s5>11</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Banda prohibida</s0><s5>11</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Cinétique</s0><s5>12</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Kinetics</s0><s5>12</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Cinética</s0><s5>12</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Couche tampon</s0><s5>13</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Buffer layer</s0><s5>13</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Capa tampón</s0><s5>13</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Vaporisation</s0><s5>14</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Vaporization</s0><s5>14</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Vaporización</s0><s5>14</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Sulfure d'argent</s0><s5>15</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Silver sulfide</s0><s5>15</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Plata sulfuro</s0><s5>15</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Sulfure d'indium</s0><s5>16</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Indium sulfide</s0><s5>16</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Indio sulfuro</s0><s5>16</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Composé ternaire</s0><s5>17</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Ternary compound</s0><s5>17</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Compuesto ternario</s0><s5>17</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Dépôt bain chimique</s0><s5>22</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Chemical bath deposition</s0><s5>22</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Depósito baño químico</s0><s5>22</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Zn(O,OH)S</s0><s4>INC</s4><s5>32</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>AgInS2</s0><s4>INC</s4><s5>33</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>8460J</s0><s2>PAC</s2><s4>INC</s4><s5>45</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>6110N</s0><s2>PAC</s2><s4>INC</s4><s5>46</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>6855J</s0><s2>PAC</s2><s4>INC</s4><s5>47</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>7820C</s0><s2>PAC</s2><s4>INC</s4><s5>48</s5></fC03><fN21><s1>333</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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